Electron Mobility in InP at Low Electric Field Application

Temperature and doping dependencies of electron mobility in InP semiconductor has been calculated using an iterative technique. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon and piezoelectric are included in the calculation. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low temperature value of electron mobility increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods. Keywords-: Polar optical; ionized impurity scattering; electron mobility